Datasheet

2003 Aug 20 2
NXP Semiconductors Product data sheet
Schottky barrier diode 1PS10SB82
FEATURES
• Low forward voltage
• Low diode capacitance
• Leadless ultra small plastic package
(1.0
mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm
2
(approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
APPLICATIONS
• UHF mixers
• Sampling circuits
• Modulators
• Phase detectors
• Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
handbook, halfpage
MDB391 Bottom view
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
Marking code: S5.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
continuous reverse voltage − 15 V
I
F
continuous forward current − 30 mA
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C