Datasheet

2003 Aug 20 3
NXP Semiconductors Product data sheet
Schottky barrier diode 1PS10SB82
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage see Fig.2
I
F
= 1 mA − 340 mV
I
F
= 30 mA − 700 mV
r
D
differential diode forward resistance f = 1 MHz; I
F
= 5 mA; see Fig.5 12 − Ω
I
R
continuous reverse current V
R
= 1 V; see Fig.3; note 1 − 0.2 μA
C
d
diode capacitance V
R
= 0 V; f = 1 MHz; see Fig.4 1 − pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W