Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETs2N7002BKMB,315, MOSFET

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Trench MOSFET technology

 ESD protection up to 2 kV

 Logic-level compatible

 Ultra thin package profile with 0.37

mm height

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm

2N7002BKMB

60 V, single N-channel Trench MOSFET

Rev. 2 — 13 June 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C --60V

gate-source voltage -20 - 20 V

drain current V

=10V; T

amb

=25°C

[1]

- - 450 mA

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=450mA; T

=25°C - 1 1.6 Ω

Summary of content (15 pages)

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83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Logic-level compatible  Trench MOSFET technology  Ultra thin package profile with 0.
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N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 Transparent top view G SOT883B (DFN1006B-3) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKMB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET aaa-002590 10 ID (A) limit RDSon = VDS / ID 1 (1) 10-1 (2) (3) (4) (5) 10-2 10-1 1 102 10 VDS (V) IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10−3 0.05 0.02 0.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa039 0.7 VGS = 4.0 V ID (A) 0.6 017aaa040 10−3 3.5 V ID (A) 3.25 V 0.5 10−4 (1) 0.4 (3) (2) 3.0 V 0.3 10−5 2.75 V 0.2 2.5 V 0.1 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 1.0 2.0 VDS (V) 3.0 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa041 6.0 Fig 8.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa043 1.0 aaa-002591 2.4 ID (A) a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 -60 0 60 120 180 Tj (°C) VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-002592 3.0 Fig 12.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa047 5.0 VDS VGS (V) ID 4.0 VGS(pl) 3.0 VGS(th) VGS 2.0 QGS1 QGS2 QGS 1.0 QGD QG(tot) 003aaa508 0.0 0.0 0.2 0.4 0.6 0.8 QG (nC) ID = 300 mA; VDS = 30 V; Tj = 25 °C Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Gate charge waveform definitions 017aaa048 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 17.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 18. Duty cycle definition 9. Package outline 0.65 0.55 0.40 0.34 0.35 0.20 0.12 1 0.04 max 2 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 19. Package outline SOT883B (DFN1006B-3) 2N7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 June 2012 © NXP B.V. 2012.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3) 2N7002BKMB Product data sheet All information provided in this document is subject to legal disclaimers.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002BKMB v.2 20120613 Product data sheet - 2N7002BKMB v.1 Modifications: 2N7002BKMB v.1 2N7002BKMB Product data sheet • 7 “Characteristics”: RDSon condition corrected 20120511 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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2N7002BKMB NXP Semiconductors 60 V, single N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . .