Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETs2N7002CK,215, MOSFET

1. Product proﬁle

1.1 General description

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a

small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features

n Logic-level compatible

n Very fast switching

n Trench MOSFET technology

n ESD protection up to 3 kV

1.3 Applications

n Relay driver

n High-speed line driver

n Low-side loadswitch

n Switching circuits

1.4 Quick reference data

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Rev. 01 — 11 September 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage - - 60 V

drain current - - 300 mA

peak drain current single pulse;

≤ 10 µs

- - 1.2 A

DSon

drain-source on-state

resistance

=10V;

= 500 mA

- 1.1 1.6 Ω

Summary of content (13 pages)

PAGE 1
2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features n n n n Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.
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N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name 2N7002CK Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa003 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 100 µs 10−1 1 ms DC 10 ms 100 ms 10−2 10−1 1 102 10 VDS (V) Tsp = 25 °C; IDM = single pulse; VGS = 10 V Fig 3.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET Table 6. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] Conditions Min Typ Max Unit - - 150 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 55 - - V 1 1.75 2.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa005 1.0 (1) ID (A) 017aaa006 10−3 (3) (2) ID (A) (4) 0.8 10−4 0.6 (1) (3) (2) (5) 0.4 10−5 0.2 10−6 0.0 0 1 2 3 4 0 1 2 VDS (V) 3 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V (1) VGS = 10 V (1) minimum values (2) VGS = 5 V (2) typical values (3) VGS = 4.5 V (3) maximum values (4) VGS = 4 V (5) VGS = 3.5 V Fig 5.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa009 2.4 017aaa010 3 a VGS(th) (V) (1) 1.8 2 (2) 1.2 (3) 1 0.6 0.0 −60 0 60 120 0 −60 180 0 60 Tj (°C) 120 180 Tj (°C) ID = 0.25 mA; VDS = VGS R DSon a = ----------------------------R DSon ( 25°C ) (1) maximum values (2) typical values (3) minimum values Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 10.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 017aaa012 10 VGS (V) 017aaa013 1.0 IS (A) 8 0.8 6 0.6 4 0.4 2 0.2 0 0.0 0.4 0.8 1.2 (1) 0.0 0.2 0.4 QG (nC) ID = 200 mA; VDD = 30 V; Tj = 25 °C 0.6 (2) 0.8 (3) 1.0 1.2 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C (3) Tj = −55 °C Fig 12. Gate-source voltage as a function of gate charge; typical values Fig 13.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 15. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 16.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002CK_1 20090911 Product data sheet - - 2N7002CK_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . .