Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETs2N7002GEG-HSMD, MOSFET 2 N 7002 GEG HSMD N channel 60V

1. Product proﬁle

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

2N7002

N-channel TrenchMOS™ FET

Rev. 04 — 26 April 2005 Product data sheet

■ Logic level threshold compatible ■ Very fast switching

■ Surface-mounted package ■ TrenchMOS™ technology

■ Logic level translator ■ High speed line driver

■ V

≤ 60 V ■ I

≤ 300 mA

■ R

DSon

≤ 5 Ω ■ P

tot

= 0.83 W

Table 1: Pinning

Pin Description Simpliﬁed outline Symbol

1 gate (G)

SOT23

2 source (S)

3 drain (D)

mbb076

Summary of content (12 pages)

PAGE 1
2N7002 N-channel TrenchMOS™ FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS™ technology 1.3 Applications ■ Logic level translator ■ High speed line driver 1.4 Quick reference data ■ VDS ≤ 60 V ■ RDSon ≤ 5 Ω ■ ID ≤ 300 mA ■ Ptot = 0.83 W 2.
PAGE 2
N7002 Philips Semiconductors N-channel TrenchMOS™ FET 3. Ordering information Table 2: Ordering information Type number 2N7002 Package Name Description Version TO-236AB plastic surface mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 Tsp (°C) 200 0 P tot P der = ------------------------ × 100 % P ° 50 100 150 Tsp (°C) 200 ID I der = --------------------- × 100 % I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2.
PAGE 4
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 150 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; minimum footprint; vertical in still air - - 350 K/W 03aa01 103 Zth(j-sp) K/W 102 δ = 0.5 0.2 0.1 10 0.02 0.
PAGE 5
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 - - V Tj = −55 °C 55 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 10 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C 1 2 3 V Tj = 150 °C 0.
PAGE 6
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 03aa04 0.8 ID (A) 03aa05 10 RDSon (Ω) 10 Tj = 25 °C VGS (V) = 3 Tj = 25 °C 3.5 VGS (V) = 8 0.6 4.5 6 4 0.4 4 4.5 4 3.5 0.2 10 2 3 0 0 0 0.4 0.8 1.2 1.6 VDS (V) 0 2 Tj = 25 °C 0.2 0.4 0.6 ID (A) 0.8 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03aa06 0.8 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03aa28 2.
PAGE 7
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 03aa34 2.4 03aa37 10-1 ID (A) VGS(th) (V) typ 10-2 1.8 10-3 min 1.2 min typ 10-4 0.6 10-5 0 -60 10-6 0 60 120 Tj (°C) 0 180 0.6 1.2 1.8 VGS (V) 2.4 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 03aa07 0.4 Fig 10. Sub-threshold drain current as a function of gate-source voltage 03aa09 102 Tj = 25 °C gfs (S) 0.3 C (pF) 150 °C Ciss Coss 10 0.2 0.
PAGE 8
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 03aa08 1 VGS = 0 V IS (A) 0.8 0.6 0.4 0.2 Tj = 25 °C 150 °C 0 0 0.4 0.8 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 9397 750 14915 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev.
PAGE 9
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 7. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
PAGE 10
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 2N7002_4 20050426 Product data sheet - 9397 750 14915 2N7002-03 Modifications: 2N7002-03 Modifications: • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Table 5 “Characteristics” Addition of upper limit for VGS(th).
PAGE 11
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 12
2N7002 Philips Semiconductors N-channel TrenchMOS™ FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . .