Datasheet

2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 2 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT23 (TO-236AB)
2Ssource
3 D drain
12
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
2N7002P LW%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
amb
=25°C - 60 V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
amb
=25°C
[1]
- 360 mA
V
GS
=10V; T
amb
= 100 °C
[1]
- 280 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 1.2 A
P
tot
total power dissipation T
amb
=25°C
[2]
- 350 mW
[1]
- 420 mW
T
sp
=25°C - 1140 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
=25°C
[1]
- 360 mA