Datasheet

2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 3 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
I
DM
= single pulse
(1) t
p
= 100 μs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
sp
= 25 °C
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
T
amb
(°C)
−75 17512525 75−25
017aaa001
40
80
120
P
der
(%)
0
T
amb
(°C)
−75 17512525 75−25
017aaa002
40
80
120
I
der
(%)
0
017aaa014
10
−1
10
−2
1
10
I
D
(A)
10
−3
V
DS
(V)
10
−1
10
2
101
(1)
(2)
(3)
(4)
(5)
(6)