Datasheet

2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 5 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=10µA; V
GS
=0V; T
j
=25°C 60--V
V
GSth
gate-source threshold
voltage
I
D
=250µA; V
DS
=V
GS
; T
j
= 25 °C 1.1 1.75 2.4 V
I
DSS
drain leakage current V
DS
=60V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=60V; V
GS
=0V; T
j
=150°C --10µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
= 50 mA; pulsed;
t
p
≤ 300 µs; δ≤0.01 ; T
j
=25°C
-1.32Ω
V
GS
=10V; I
D
= 500 mA; pulsed;
t
p
≤ 300 µs; δ≤0.01 ; T
j
=25°C
-11.6Ω
g
fs
forward
transconductance
V
DS
=10V; I
D
= 200 mA; pulsed;
t
p
≤ 300 µs; δ≤0.01 ; T
j
=25°C
- 400 - mS
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=300mA; V
DS
=30V; V
GS
=4.5V;
T
j
=25°C
-0.60.8nC
Q
GS
gate-source charge - 0.2 - nC
Q
GD
gate-drain charge - 0.2 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=10V; f=1MHz;
T
j
=25°C
- 3050pF
C
oss
output capacitance - 7 - pF
C
rss
reverse transfer
capacitance
-4-pF
t
d(on)
turn-on delay time V
DS
=50V; R
L
= 250 Ω; V
GS
=10V;
R
G(ext)
=6Ω; T
j
=25°C
- 36ns
t
r
rise time - 4 - ns
t
d(off)
turn-off delay time - 10 20 ns
t
f
fall time -5-ns
Source-drain diode
V
SD
source-drain voltage I
S
=115mA; V
GS
=0V; T
j
= 25 °C 0.47 0.75 1.1 V