Datasheet

2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 6 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
T
amb
= 25 °C T
amb
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
amb
= 25 °C
(1) V
GS
= 3.25 V
(2) V
GS
= 3.5 V
(3) V
GS
= 4 V
(4) V
GS
= 5 V
(5) V
GS
= 10 V
I
D
= 500 mA
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0.0 4.03.01.0 2.0
017aaa017
0.4
0.5
0.3
0.2
0.1
0.6
0.7
I
D
(A)
0.0
3.5 V
V
GS
= 4.0 V
3.0 V
2.75 V
2.5 V
3.25 V
017aaa018
V
GS
(V)
0321
10
−4
10
−5
10
−3
I
D
(A)
10
−6
(2)(1)
(3)
I
D
(A)
0.0 1.00.80.4 0.60.2
017aaa019
5.0
2.5
7.5
10.0
R
DSon
(Ω)
0.0
(2)
(1)
(3)
(4)
(5)
V
GS
(V)
0.0 10.08.04.0 6.02.0
017aaa020
2.0
4.0
6.0
R
DSon
(Ω)
0.0
(1)
(2)