Datasheet

2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 8 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
I
D
= 300 mA; V
DS
= 30 V; T
amb
= 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
V
GS
= 0 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
Q
G
(nC)
0.0 0.80.60.2 0.4
017aaa025
2.0
3.0
1.0
4.0
5.0
V
GS
(V)
0.0
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
V
SD
(V)
0.0 1.20.80.4
017aaa026
0.4
0.8
1.2
I
S
(A)
0.0
(1) (2)