2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.
N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source1 2 G1 gate1 3 D2 drain2 4 S2 source2 5 G2 gate2 6 D1 drain1 Simplified outline 6 5 4 1 2 3 Graphic symbol D1 S1 D2 G1 S2 G2 msd901 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa033 10 ID (A) 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.75 2.4 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 100 nA - 1.3 2 Ω - 1 1.6 Ω - 400 - mS - 0.6 0.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa017 0.7 VGS = 4.0 V ID (A) 0.6 017aaa018 10−3 3.5 V ID (A) 0.5 10−4 3.25 V (1) 0.4 0.3 (3) (2) 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 10−6 0.0 0.0 1.0 2.0 3.0 4.0 0 1 2 VDS (V) 3 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Per transistor: Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa021 1.0 017aaa022 2.4 ID (A) a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 (2) 0.0 0.0 1.0 (1) 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID × RDSon 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Per transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa023 3.0 VGS(th) (V) 0 Fig 11.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa025 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QGD QG(tot) QG (nC) 003aaa508 ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Per transistor: Gate-source voltage as a function of gate charge; typical values Fig 15. Per transistor: Gate charge waveform definitions 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002PS Product data sheet All information provided in this document is subject to legal disclaimers.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002PS v.1 20100701 Product data sheet - - 2N7002PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 July 2010 © NXP B.V. 2010. All rights reserved.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.
2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . .
