Datasheet

74AHC_AHCT1G08 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 7 — 18 November 2014 5 of 12
NXP Semiconductors
74AHC1G08; 74AHCT1G08
2-input AND gate
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] Typical values are measured at V
CC
= 3.3 V.
[3] Typical values are measured at V
CC
= 5.0 V.
[4] C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
=C
PD
 V
CC
2
 f
i
+  (C
L
 V
CC
2
 f
o
)where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 1.0 - 10 - 40 A
I
CC
additional
supply current
per input pin; V
I
=3.4V;
other inputs at V
CC
or GND;
I
O
=0 A; V
CC
= 5.5 V
- - 1.35 - 1.5 - 1.5 mA
C
I
input
capacitance
- 1.5 10 - 10 - 10 pF
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
=  3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
For type 74AHC1G08
t
pd
propagation
delay
A and B to Y; see Figure 5
[1]
V
CC
= 3.0 V to 3.6 V
[2]
C
L
= 15 pF - 4.6 8.8 1.0 10.5 1.0 12.0 ns
C
L
= 50 pF - 6.5 12.3 1.0 14.0 1.0 16.0 ns
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.2 5.9 1.0 7.0 1.0 8.0 ns
C
L
= 50 pF - 4.6 7.9 1.0 9.0 1.0 10.5 ns
C
PD
power
dissipation
capacitance
per buffer; C
L
=50pF;f= 1
MHz; V
I
=GNDtoV
CC
[4]
-17- - - - - pF
For type 74AHCT1G08
t
pd
propagation
delay
A and B to Y; see Figure 5
[1]
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.6 6.2 1.0 7.1 1.0 8.0 ns
C
L
= 50 pF - 5.1 7.9 1.0 9.0 1.0 10.5 ns
C
PD
power
dissipation
capacitance
per buffer; C
L
=50pF;f= 1
MHz; V
I
=GNDtoV
CC
[4]
-19- - - - - pF