Datasheet

74AUP1G07 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 7 — 16 July 2012 8 of 19
NXP Semiconductors
74AUP1G07
Low-power buffer with open-drain output
[1] All typical values are measured at nominal V
CC
.
[2] t
pd
is the same as t
PZL
and t
PLZ
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
 V
CC
2
 f
i
 Nwhere:
f
i
= input frequency in MHz;
V
CC
= supply voltage in V;
N = number of inputs switching.
C
L
= 30 pF
t
pd
propagation delay A to Y; see Figure 8
[2]
V
CC
= 0.8 V - 24.6 - - - - ns
V
CC
= 1.1 V to 1.3 V 4.8 9.0 15.6 4.3 18.8 20.7 ns
V
CC
= 1.4 V to 1.6 V 4.1 6.7 9.4 3.7 11.8 13.0 ns
V
CC
= 1.65 V to 1.95 V 3.8 6.8 9.7 3.2 11.0 12.1 ns
V
CC
= 2.3 V to 2.7 V 3.7 5.2 6.7 3.0 7.1 7.8 ns
V
CC
= 3.0 V to 3.6 V 3.6 6.4 9.7 2.8 10.4 11.4 ns
C
L
= 5 pF, 10 pF, 15 pF and 30 pF
C
PD
power dissipation
capacitance
f
i
= 1 MHz;
V
I
=GNDtoV
CC
[3]
V
CC
= 0.8 V - 0.5 - - - - pF
V
CC
= 1.1 V to 1.3 V - 0.6 - - - - pF
V
CC
= 1.4 V to 1.6 V - 0.6 - - - - pF
V
CC
= 1.65 V to 1.95 V - 0.7 - - - - pF
V
CC
= 2.3 V to 2.7 V - 0.9 - - - - pF
V
CC
= 3.0 V to 3.6 V - 1.2 - - - - pF
Table 8. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
(85 C)
Max
(125 C)