Datasheet

74AVC4TD245 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 9 December 2011 10 of 26
NXP Semiconductors
74AVC4TD245
4-bit dual supply translating transceiver; 3-state
11. Dynamic characteristics
[1] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
[2] f
i
= 10 MHz; V
I
=GNDtoV
CC
; t
r
= t
f
= 1 ns; C
L
= 0 pF; R
L
= .
Table 10. Typical power dissipation capacitance at V
CC(A)
= V
CC(B)
and T
amb
= 25 C
[1][2]
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions V
CC(A)
= V
CC(B)
Unit
0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V
C
PD
power dissipation
capacitance
A port: (direction An to
Bn); output enabled
0.2 0.2 0.2 0.2 0.3 0.4 pF
A port: (direction An to
Bn); output disabled
0.2 0.2 0.2 0.2 0.3 0.4 pF
A port: (direction Bn to
An); output enabled
9.5 9.7 9.8 9.9 10.7 11.9 pF
A port: (direction Bn to
An); output disabled
0.6 0.6 0.6 0.6 0.7 0.7 pF
B port: (direction An to
Bn); output enabled
9.5 9.7 9.8 9.9 10.7 11.9 pF
B port: (direction An to
Bn); output disabled
0.6 0.6 0.6 0.6 0.7 0.7 pF
B port: (direction Bn to
An); output enabled
0.2 0.2 0.2 0.2 0.3 0.4 pF
B port: (direction Bn to
An); output disabled
0.2 0.2 0.2 0.2 0.3 0.4 pF