Datasheet

December 1990 4
Philips Semiconductors Product specification
Quad 2-input NAND gate 74HC/HCT03
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
V
CC
DC supply voltage −0.5 +7 V
V
O
DC output voltage −0.5 +7 V
I
IK
DC input diode current 20 mA for V
I
<−0.5 V or V
I
> V
CC
+ 0.5 V
−I
OK
DC output diode current 20 mA for V
O
<−0.5 V
−I
O
DC output sink current 25 mA for − 0.5 V < V
O
±I
CC
;
±I
GND
DC VCC or GND current 50 mA
T
stg
storage temperature range −65 +150 °C
P
tot
power dissipation per package for temperature range; −40 to +125 °C
74HC/HCT
plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K
plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K