Datasheet

74HC_HCT1G14 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 27 December 2012 5 of 16
NXP Semiconductors
74HC1G14; 74HCT1G14
Inverting Schmitt trigger
12. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
=C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
)where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF; V
CC
= supply voltage in Volts
(C
L
V
CC
2
f
o
) = sum of outputs
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--10 - 20A
I
CC
additional supply
current
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
=0A
- - 500 - 850 A
C
I
input capacitance - 1.5 - - - pF
V
T+
positive-going
threshold voltage
see Figure 7 and Figure 8
V
CC
= 4.5 V 1.2 1.55 1.9 1.2 1.9 V
V
CC
= 5.5 V 1.4 1.80 2.1 1.4 2.1 V
V
T
negative-going
threshold voltage
see Figure 7 and Figure 8
V
CC
= 4.5 V 0.5 0.76 1.2 0.5 1.2 V
V
CC
= 5.5 V 0.6 0.90 1.4 0.6 1.4 V
V
H
hysteresis voltage see Figure 7 and Figure 8
V
CC
= 4.5 V 0.4 0.80 - 0.4 - V
V
CC
= 5.5 V 0.4 0.90 - 0.4 - V
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
C.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
6.0 ns; All typical values are measured at T
amb
=25
C. For test circuit see Figure 6
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
For type 74HC1G14
t
pd
propagation delay A to Y; see Figure 5
[1]
V
CC
= 2.0 V; C
L
= 50 pF - 25 155 - 190 ns
V
CC
= 4.5 V; C
L
=50pF - 12 31 - 38 ns
V
CC
= 5.0 V; C
L
=15pF - 10 - - - ns
V
CC
= 6.0 V; C
L
=50pF - 11 26 - 32 ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
[2]
-20- - -pF
For type 74HCT1G14
t
pd
propagation delay A to Y; see Figure 5
[1]
V
CC
= 4.5 V; C
L
=50pF - 17 43 - 51 ns
V
CC
= 5.0 V; C
L
=15pF - 15 - - - ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
1.5 V
[2]
-22- - -pF