Datasheet
74HC3GU04 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 2 October 2013 4 of 17
NXP Semiconductors 74HC3GU04
Triple unbuffered inverter
10. Static characteristics
[1] All typical values are measured at T
amb
= 25 C.
11. Dynamic characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V 1.7 1.1 - 1.7 - V
V
CC
= 4.5 V 3.6 2.4 - 3.6 - V
V
CC
= 6.0 V 4.8 3.1 - 4.8 - V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V - 0.9 0.3 - 0.3 V
V
CC
= 4.5 V - 2.1 0.9 - 0.9 V
V
CC
= 6.0 V - 2.9 1.2 - 1.2 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 4.13 4.32 - 3.7 - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.63 5.81 - 5.2 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.33 - 0.4 V
I
I
input leakage current V
I
=V
CC
or GND; V
CC
=6.0V - - 1.0 - 1.0 A
I
CC
supply current per input pin; V
I
=V
CC
or GND;
I
O
=0A; V
CC
=6.0V
--10 - 20A
C
I
input capacitance - 3.0 - - - pF
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA to nY; see Figure 5
[2]
V
CC
= 2.0 V - 13 75 - 90 ns
V
CC
= 4.5 V - 6 15 - 18 ns
V
CC
= 6.0 V - 5 13 - 15 ns