Datasheet

74HC_HCT11_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 25 March 2010 5 of 15
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
10. Dynamic characteristics
C
I
input
capacitance
- 3.5 - - - - - pF
74HCT11
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input
voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= −20 μA 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 μA; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
= 5.5 V
- - ±0.1 - ±1 - ±1 μA
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 2.0 - 20 - 40 μA
ΔI
CC
additional
supply current
per input pin;
V
I
= V
CC
− 2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 100 360 - 450 - 490 μA
C
I
input
capacitance
- 3.5 - - - - - pF
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see Figure 7.
Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit
Min Typ Max Max
(85
°C)
Max
(125
°C)
74HC11
t
pd
propagation delay nA, nB to nY; see Figure 6
[1]
V
CC
= 2.0 V - 32 100 125 150 ns
V
CC
= 4.5 V - 12 20 25 30 ns
V
CC
= 5.0 V; C
L
= 15 pF - 9 - - - ns
V
CC
= 6.0 V - 10 17 21 26 ns
t
t
transition time see Figure 6
[2]
V
CC
= 2.0 V - 19 75 95 110 ns
V
CC
= 4.5 V - 7 15 19 22 ns
V
CC
= 6.0 V - 6 13 16 19 ns
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
[3]
- 18 - - - pF