Datasheet

74HC_HCT30 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 27 December 2012 6 of 16
NXP Semiconductors
74HC30; 74HCT30
8-input NAND gate
10. Dynamic characteristics
C
I
input
capacitance
-3.5- - - - -pF
74HCT30
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA - 0.15 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=5.5V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--2.0- 20 - 40A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
 2.4 V; I
O
=0A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 60 216 - 275 - 294 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see Figure 6.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
74HC30
t
pd
propagation delay A, B, C, D, E, F, G, H to Y;
see Figure 5
[1]
V
CC
= 2.0 V - 41 130 165 195 ns
V
CC
= 4.5 V - 15 26 33 39 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
V
CC
= 6.0 V - 12 22 28 33 ns
t
t
transition time see Figure 5
[2]
V
CC
= 2.0 V - 19 75 95 110 ns
V
CC
= 4.5 V - 7 15 19 22 ns
V
CC
= 6.0 V - 6 13 16 19 ns