Datasheet

9397 750 14501 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 4 February 2005 5 of 21
Philips Semiconductors
74LV164
8-bit serial-in/parallel-out shift register
7. Functional description
7.1 Function table
[1] H = HIGH voltage level;
L = LOW voltage level;
↑ = LOW-to-HIGH clock transition;
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH CP transition;
l = LOW voltage level one set-up time prior to the LOW-to-HIGH CP transition;
q = lower case letter indicates the state of referenced input one set-up time prior to the LOW-to-HIGH CP
transition.
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] DIP14 package: P
tot
derates linearly with 12 mW/K above 70 °C.
[3] SO14 package: P
tot
derates linearly with 8 mW/K above 70 °C.
(T)SSOP14 package: P
tot
derates linearly with 5.5 mW/K above 60 °C.
DHVQFN14 package: P
tot
derates linearly with 4.5 mW/K above 60 °C.
Table 4: Function table
[1]
Operating
mode
Input Output
MR CP DSA DSB Q0 Q1 to Q7
Reset (clear) L X X X L L to L
Shift H ↑ l l L q0 to q6
H ↑ l h L q0 to q6
H ↑ h l L q0 to q6
H ↑ h h H q0 to q6
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
I
IK
input diode current V
I
< −0.5 V or V
I
> V
CC
+ 0.5 V - ±20 mA
I
OK
output diode current V
O
< −0.5 V or V
O
> V
CC
+ 0.5 V - ±50 mA
I
O
output source or sink
current
V
O
= −0.5 V to (V
CC
+ 0.5 V)
[1]
- ±25 mA
I
CC
,
I
GND
V
CC
or GND current - ±50 mA
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
DIP14 package
[2]
- 750 mW
SO14, (T)SSOP14
and DHVQFN14
packages
[3]
- 500 mW