Datasheet

74LVC00A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 7 — 25 April 2012 3 of 14
NXP Semiconductors
74LVC00A
Quad 2-input NAND gate
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care
7. Limiting values
[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
8. Recommended operating conditions
Table 3. Function selection
[1]
Input Output
nA nB nY
LXH
XLH
HHL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +6.5 V
I
IK
input clamping current V
I
< 0 V −50 - mA
V
I
input voltage
[1]
−0.5 +6.5 V
I
OK
output clamping current V
O
> V
CC
or V
O
< 0 V - ±50 mA
V
O
output voltage output in HIGH or LOW-state
[2]
−0.5 V
CC
+ 0.5 V
I
O
output current V
O
= 0 V to V
CC
- ±50 mA
I
CC
supply current - 100 mA
I
GND
ground current −100 - mA
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
[3]
- 500 mW
T
stg
storage temperature −65 +150 °C
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.65 - 3.6 V
functional 1.2 - - V
V
I
input voltage 0 - 5.5 V
V
O
output voltage output HIGH or LOW state 0 - V
CC
V
T
amb
ambient temperature −40 - +125 °C
Δt/ΔV input transition rise and
fall rate
V
CC
= 1.65 V to 2.7 V 0 - 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 - 10 ns/V