Datasheet

74LVC00A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 7 — 25 April 2012 4 of 14
NXP Semiconductors
74LVC00A
Quad 2-input NAND gate
9. Static characteristics
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25°C.
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 1.2 V 1.08 - - 1.08 - V
V
CC
= 1.65 V to 1.95 V 0.65 × V
CC
- - 0.65 × V
CC
-V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 1.2 V - - 0.12 - 0.12 V
V
CC
= 1.65 V to 1.95 V - - 0.35 × V
CC
-0.35 × V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 V
V
OH
HIGH-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= −100 μA;
V
CC
=1.65Vto3.6V
V
CC
− 0.2 - - V
CC
− 0.3 - V
I
O
= −4mA; V
CC
= 1.65 V 1.2 - - 1.05 - V
I
O
= −8mA; V
CC
= 2.3 V 1.8 - - 1.65 - V
I
O
= −12 mA; V
CC
= 2.7 V 2.2 - - 2.05 - V
I
O
= −18 mA; V
CC
= 3.0 V 2.4 - - 2.25 - V
I
O
= −24 mA; V
CC
= 3.0 V 2.2 - - 2.0 - V
V
OL
LOW-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 μA;
V
CC
= 1.65 V to 3.6 V
- - 0.2 - 0.3 V
I
O
=4mA; V
CC
= 1.65 V - - 0.45 - 0.65 V
I
O
=8mA; V
CC
= 2.3 V - - 0.6 - 0.8 V
I
O
=12mA; V
CC
= 2.7 V - - 0.4 - 0.6 V
I
O
=24mA; V
CC
= 3.0 V - - 0.55 - 0.8 V
I
I
input leakage
current
V
CC
= 3.6 V; V
I
=5.5VorGND - ±0.1 ±5- ±20 μA
I
CC
supply
current
V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.110-40μA
ΔI
CC
additional
supply
current
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
=V
CC
− 0.6 V; I
O
=0A
- 5 500 - 5000 μA
C
I
input
capacitance
V
CC
= 0 V to 3.6 V;
V
I
=GNDtoV
CC
-4.0---pF