Datasheet
74LVC1G10 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 10 September 2014 6 of 17
NXP Semiconductors
74LVC1G10
Single 3-input NAND gate
11. Dynamic characteristics
[1] Typical values are measured at T
amb
=25C and V
CC
= 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
12. Waveforms
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay A, B and C to Y; see Figure 7
[2]
V
CC
= 1.65 V to 1.95 V 1.5 4.7 18.0 1.5 21.5 ns
V
CC
= 2.3 V to 2.7 V 1.0 3.0 6.5 1.0 7.8 ns
V
CC
= 2.7 V 1.0 3.0 6.0 1.0 7.5 ns
V
CC
= 3.0 V to 3.6 V 1.0 2.6 5.0 1.0 6.2 ns
V
CC
= 4.5 V to 5.5 V 1.0 1.9 3.6 1.0 4.4 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
; V
CC
= 3.3 V
[3]
-12- - -pF
Measurement points are given in Table 9.
V
OL
and V
OH
are typical output voltage levels that occur with the output load.
Fig 7. The input (A, B, C) to output (Y) propagation delays
001aag692
t
PLH
V
M
V
M
t
PHL
V
I
A, B, C,
input
Y output
GND
V
OH
V
OL