Datasheet

74LVC1G386_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 3 September 2007 6 of 12
NXP Semiconductors
74LVC1G386
3-input EXCLUSIVE-OR gate
11. Dynamic characteristics
[1] Typical values are measured at T
amb
=25°C and V
CC
= 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
× V
CC
2
× f
o
) = sum of outputs.
12. AC waveforms
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 6.
Symbol Parameter Conditions 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay A, B, C to Y; see Figure 5
[2]
V
CC
= 1.65 V to 1.95 V 2.0 8.0 17.0 2.0 22.0 ns
V
CC
= 2.3 V to 2.7 V 1.5 5.0 9.0 1.5 11.5 ns
V
CC
= 2.7 V 1.5 5.0 8.5 1.5 11.0 ns
V
CC
= 3.0 V to 3.6 V 1.0 4.5 7.5 1.0 9.5 ns
V
CC
= 4.5 V to 5.5 V 1.0 3.5 5.5 1.0 7.0 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
; V
CC
= 3.3 V
[3]
-13- - -pF
Measurement points are given in Table 9.
V
OL
and V
OH
are typical output voltage levels that occur with the output load.
Fig 5. Input A, B, C to output Y propagation delays
mnb147
t
PHL
t
PLH
t
PLH
V
M
V
M
A, B, C
input
Y output
in phase
GND
V
I
V
OH
V
OL
Y output
out of phase
V
OH
V
OL
t
PHL
V
M