Datasheet
74LVC1G80 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 12 — 2 July 2012 8 of 21
NXP Semiconductors
74LVC1G80
Single D-type flip-flop; positive-edge trigger
[1] Typical values are measured at T
amb
=25C and V
CC
= 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] t
su
is the same as t
su(H)
and t
su(L)
.
[4] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
t
h
hold time D to CP; see Figure 9
V
CC
= 1.65 V to 1.95 V 0 0.6 - 0 - ns
V
CC
= 2.3 V to 2.7 V 0 0.4 - 0 - ns
V
CC
= 2.7 V +0.5 0.2 - 0.5 - ns
V
CC
= 3.0 V to 3.6 V 0.9 0.2 - 0.9 - ns
V
CC
= 4.5 V to 5.5 V +0.5 0.1 - 0.5 - ns
t
W
pulse width CP HIGH or LOW;
see Figure 9
V
CC
= 1.65 V to 1.95 V 3.0 1.1 - 3.0 - ns
V
CC
= 2.3 V to 2.7 V 2.5 0.7 - 2.5 - ns
V
CC
= 2.7 V 2.5 0.6 - 2.5 - ns
V
CC
= 3.0 V to 3.6 V 2.5 0.6 - 2.5 - ns
V
CC
= 4.5 V to 5.5 V 2.0 0.5 - 2.0 - ns
f
max
maximum
frequency
CP; see Figure 9
V
CC
= 1.65 V to 1.95 V 160 300 - 160 - MHz
V
CC
= 2.3 V to 2.7 V 160 350 - 160 - MHz
V
CC
= 2.7 V 160 350 - 160 - MHz
V
CC
= 3.0 V to 3.6 V 160 350 - 160 - MHz
V
CC
= 4.5 V to 5.5 V 200 400 - 200 - MHz
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
;
V
CC
= 3.3 V
[4]
-17---pF
Table 8. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 10.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max