Datasheet
74LVC1G86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 10 — 2 July 2012 6 of 19
NXP Semiconductors
74LVC1G86
2-input EXCLUSIVE-OR gate
[1] All typical values are measured at V
CC
= 3.3 V and T
amb
=25C.
11. Dynamic characteristics
[1] All typical values are measured at nominal V
CC
.
[2] t
pd
is the same as t
PLH
and t
PHL
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
I
OFF
power-off
leakage current
V
CC
= 0 V; V
I
or V
O
=5.5V - 0.1 10 - 200 A
I
CC
supply current V
I
= 5.5 V or GND; I
O
= 0 A;
V
CC
= 1.65 V to 5.5 V
- 0.1 10 - 200 A
I
CC
additional
supply current
per pin; V
CC
= 2.3 V to 5.5 V;
V
I
=V
CC
0.6 V; I
O
=0 A
- 5 500 - 5000 A
C
I
input
capacitance
V
CC
=3.3V; V
I
= GND to V
CC
-5- - -pF
Table 7. Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 9
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay A, B to Y; see Figure 8
[2]
V
CC
= 1.65 V to 1.95 V 1.0 3.7 9.9 1.0 13.0 ns
V
CC
= 2.3 V to 2.7 V 0.5 2.5 5.5 0.5 7.0 ns
V
CC
= 2.7 V 0.5 2.8 5.8 0.5 7.5 ns
V
CC
= 3.0 V to 3.6 V 0.5 2.3 5.0 0.5 6.5 ns
V
CC
= 4.5 V to 5.5 V 0.5 1.9 4.0 0.5 5.5 ns
C
PD
power dissipation
capacitance
V
I
=GNDto V
CC
[3]
V
CC
= 3.3 V - 25 - - - pF