Datasheet

74LVC2G32_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 27 February 2008 7 of 15
NXP Semiconductors
74LVC2G32
Dual 2-input OR gate
11. Dynamic characteristics
[1] Typical values are measured at nominal V
CC
and at T
amb
=25°C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
= C
PD
× V
CC
2
× f
i
× N + Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
Σ(C
L
× V
CC
2
× f
o
) = sum of outputs.
12. Waveforms
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground 0 V); for test circuit see Figure 8.
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA, nB to nY; see Figure 7
[2]
V
CC
= 1.65 V to 1.95 V 1.3 3.9 8.8 1.3 11 ns
V
CC
= 2.3 V to 2.7 V 0.8 2.4 4.7 0.8 5.9 ns
V
CC
= 2.7 V 0.8 2.7 4.8 0.8 6.0 ns
V
CC
= 3.0 V to 3.6 V 0.9 2.2 4.2 0.9 5.3 ns
V
CC
= 4.5 V to 5.5 V 0.7 1.7 3.2 0.7 4.0 ns
C
PD
power dissipation
capacitance
per gate; V
I
= GND to V
CC
[3]
-14-- -pF
Measurement points are given in Table 9.
V
OL
and V
OH
are typical output voltage levels that occur with the output load.
Fig 7. Input (nA, nB) to output (nY) propagation delays
mna224
nA, nB input
nY output
t
PLH
t
PHL
GND
V
I
V
M
V
M
V
OH
V
OL