Datasheet

ADC1115S125 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 17 December 2010 8 of 38
NXP Semiconductors
ADC1115S125
11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs
10. Dynamic characteristics
10.1 Dynamic characteristics
[1] Typical values measured at V
DDA(3V)
=3V, V
DDO
= 1.8 V, V
DDA(5V)
=5V; T
amb
=25°C and C
L
= 5 pF; minimum and maximum values
are across the full temperature range T
amb
= 40 °C to +85 °C at V
DDA(3V)
=3V, V
DDO
= 1.8 V, V
DDA(5V)
=5V, V
INP
V
INM
= 1 dBFS;
internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified.
Table 7. Dynamic characteristics
[1]
Symbol Parameter Conditions ADC1115S125 Unit
Min Typ Max
Analog signal processing
α
2H
second harmonic level f
i
=3MHz - 88 - dBc
f
i
=30MHz - 87 - dBc
f
i
=70MHz - 85 - dBc
f
i
=170MHz - 83 - dBc
α
3H
third harmonic level f
i
=3MHz - 87 - dBc
f
i
=30MHz - 86 - dBc
f
i
=70MHz - 84 - dBc
f
i
=170MHz - 82 - dBc
THD total harmonic distortion f
i
=3MHz - 84 - dBc
f
i
=30MHz - 83 - dBc
f
i
=70MHz - 81 - dBc
f
i
=170MHz - 79 - dBc
ENOB effective number of bits f
i
=3MHz - 10.7 - bits
f
i
= 30 MHz - 10.7 - bits
f
i
= 70 MHz - 10.7 - bits
f
i
=170MHz - 10.6 - bits
SNR signal-to-noise ratio f
i
=3MHz - 66.2 - dBFS
f
i
= 30 MHz - 66.2 - dBFS
f
i
= 70 MHz - 66.0 - dBFS
f
i
=170MHz - 65.8 - dBFS
SFDR spurious-free dynamic
range
f
i
=3MHz - 87 - dBc
f
i
=30MHz - 86 - dBc
f
i
=70MHz - 84 - dBc
f
i
=170MHz - 82 - dBc
IMD Intermodulation distortion f
i
=3MHz - 89 - dBc
f
i
=30MHz - 88 - dBc
f
i
=70MHz - 86 - dBc
f
i
=170MHz - 84 - dBc