DISCRETE SEMICONDUCTORS DATA SHEET BAL74 High-speed diode Product data sheet Supersedes data of 1999 May 26 2003 Dec 17
NXP Semiconductors Product data sheet High-speed diode BAL74 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns 1 not connected • Continuous reverse voltage: max. 50 V 2 anode • Repetitive peak reverse voltage: max. 50 V 3 cathode • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. handbook, halfpage 2 1 1 n.c.
NXP Semiconductors Product data sheet High-speed diode BAL74 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 50 V VR continuous reverse voltage − 50 V IF continuous forward current − 215 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A − 250 mW see Fig.
NXP Semiconductors Product data sheet High-speed diode BAL74 GRAPHICAL DATA msa562 250 MBG382 300 handbook, halfpage IF (mA) IF (mA) 200 (1) (2) (3) 200 150 100 100 50 0 0 50 100 0 150 200 Tamb (°C) 0 1 Device mounted on an FR4 printed-circuit board. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Fig.3 Maximum permissible continuous forward current as a function of ambient temperature.
NXP Semiconductors Product data sheet High-speed diode BAL74 mbg377 105 Cd (pF) IR (nA) (1) (2) 104 0.6 103 0.4 102 0.2 10 MBG446 0.8 handbook, halfpage 0 0 100 Tj (°C) 0 200 4 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 Dec 17 5 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values.
NXP Semiconductors Product data sheet High-speed diode BAL74 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery time test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms.
NXP Semiconductors Product data sheet High-speed diode BAL74 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet High-speed diode BAL74 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
