Datasheet

2003 Dec 17 3
NXP Semiconductors Product data sheet
High-speed diode BAL74
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 50 V
V
R
continuous reverse voltage − 50 V
I
F
continuous forward current see Fig.2; note 1 − 215 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to surge;
see
Fig.4
t
p
= 1 µs − 4 A
t
p
= 1 ms − 1 A
t
p
= 1 s − 0.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 1 mA 715 mV
I
F
= 10 mA 855 mV
I
F
= 50 mA 1 V
I
F
= 150 mA 1.25 V
I
R
reverse current see Fig.5
V
R
= 50 V 0.1 µA
V
R
= 50 V; T
j
= 150 °C 100 µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 2 pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100 Ω; measured at I
R
= 1 mA; see Fig.7
4 ns
V
fr
forward recovery voltage when switched from I
F
= 10 mA; t
r
= 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-tp)
thermal resistance from junction to tie-point 330 K/W
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W