Datasheet

BAS40_1PSXXSB4X_SER_8 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 08 — 13 January 2010 6 of 21
NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] T
j
=25°C prior to surge.
Table 5. Marking codes
Type number Marking code
[1]
Type number Marking code
[1]
1PS70SB40 6*3 1PS75SB45 45
1PS76SB40 S4 BAS40-05 45*
1PS79SB40 T BAS40-05W 65*
BAS40 43* 1PS70SB46 6*6
BAS40H AJ BAS40-06 46*
BAS40L S6 BAS40-06W 66*
BAS40W 63* BAS40-07 47*
1PS70SB44 6*4 BAS40-07V 67
BAS40-04 44* BAS40-05V 65
BAS40-04W 64* 1PS88SB48 8*5
1PS70SB45 6*5 BAS40XY 40*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 40 V
I
F
forward current - 120 mA
I
FRM
repetitive peak forward
current
t
p
≤ 1s; δ≤0.5 - 120 mA
I
FSM
non-repetitive peak forward
current
t
p
≤ 10 ms
[1]
-200mA
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C