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1. Product proﬁle

1.1 General description

NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)

plastic package.

1.2 Features

n Low collector capacitance

n Low collector-emitter saturation voltage

n Closely matched current gain

n Reduces number of components and board space

n No mutual interference between the transistors

n AEC-Q101 qualiﬁed

1.3 Applications

n General-purpose switching and ampliﬁcation

1.4 Quick reference data

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

Rev. 01 — 17 July 2009 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement

PNP/PNP

complement

NXP JEITA

BC846BPN SOT363 SC-88 BC846BS BC856BS

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

CEO

collector-emitter voltage open base - - 65 V

collector current - - 100 mA

TR1 (NPN)

DC current gain V

=5V; I

= 2 mA 200 300 450

TR2 (PNP)

DC current gain V

= −5V;

= −2mA

200 290 450

Summary of content (15 pages)

PAGE 1
BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 — 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BC846BPN Package NXP JEITA NPN/NPN complement SOT363 SC-88 BC846BS PNP/PNP complement BC856BS 1.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 1 2 3 1 2 3 sym019 3. Ordering information Table 4. Ordering information Type number BC846BPN Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 5.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 6. Thermal characteristics Table 7.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −755 −850 mV IC = −100 mA; IB = −5 mA - −900 - mV VBE base-emitter voltage VCE = −5 V IC = −2 mA −600 −650 −750 mV IC = −10 mA - - −820 mV - 2.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 006aaa536 1 006aaa534 1.3 VBEsat (V) 1.1 VBE (V) 0.8 0.9 (1) (2) 0.7 (3) 0.6 0.5 0.3 0.4 10−1 1 10 102 0.1 10−1 103 1 10 102 103 IC (mA) IC (mA) VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 5. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values 006aaa535 10 Fig 6.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 006aab620 6 006aaa539 15 Ce (pF) 13 Cc (pF) 4 11 9 2 7 0 0 2 4 6 8 5 10 VCB (V) 0 4 f = 1 MHz; Tamb = 25 °C TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values 006aaa541 600 Fig 10. TR1 (NPN): Emitter capacitance as a function of emitter-base voltage; typical values 006aaa540 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) hFE −0.16 (1) 400 −0.12 −1.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 006aaa544 −1 006aaa542 −1.3 VBEsat (V) −1.1 VBE (V) −0.8 −0.9 (1) −0.7 (2) (3) −0.6 −0.5 −0.3 −0.4 −10−1 −1 −10 −102 −103 −0.1 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values 006aaa543 −10 Fig 14.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 006aab623 10 8 Ce (pF) 13 6 11 4 9 2 7 0 0 −2 −4 −6 006aaa547 15 Cc (pF) −8 −10 VCB (V) f = 1 MHz; Tamb = 25 °C 5 0 −4 −6 VEB (V) f = 1 MHz; Tamb = 25 °C Fig 17. TR2 (PNP): Collector capacitance as a function of collector-base voltage; typical values Fig 18. TR2 (PNP): Emitter capacitance as a function of emitter-base voltage; typical values BC846BPN_1 Product data sheet −2 © NXP B.V. 2009.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 19.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 11. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 20. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 21.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BC846BPN_1 20090717 Product data sheet - - BC846BPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .