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1. Product proﬁle

1.1 General description

NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)

Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Low collector capacitance

n Low collector-emitter saturation voltage

n Closely matched current gain

n Reduces number of components and board space

n No mutual interference between the transistors

1.3 Applications

n General-purpose switching and ampliﬁcation

1.4 Quick reference data

2. Pinning information

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

Rev. 04 — 18 February 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

CEO

collector-emitter voltage open base - - 45 V

collector current - - 100 mA

DC current gain V

=5V; I

= 2 mA 200 - 450

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 emitter TR1

2 base TR1

3 collector TR2

4 emitter TR2

5 base TR2

6 collector TR1

132

sym019

TR1

TR2

Summary of content (14 pages)

PAGE 1
BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors 1.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number BC847BPN Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] BC847BPN 13* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 006aab419 500 Ptot (mW) (1) 400 (2) 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves SOT363 (SC-88) 6. Thermal characteristics Table 6.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 006aab420 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab421 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 10 0.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mgt727 600 hFE IB (mA) = 4.0 3.6 3.2 2.8 2.4 2.0 IC (A) (1) 500 006aab422 0.20 0.15 1.6 400 1.2 (2) 0.8 300 0.10 0.4 200 0.05 (3) 100 0 10−1 1 102 10 0 103 0 1 2 3 4 5 VCE (V) I C (mA) Tamb = 25 °C VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 5.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mgt729 104 VCEsat (mV) 006aab424 109 fT (Hz) 103 108 102 (1) (3) (2) 10 10−1 1 10 102 103 107 10−1 1 102 10 IC (mA) I C (mA) VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 9.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 006aab425 600 IB (mA) = −3.5 IC (A) (1) hFE 006aab426 −0.20 −0.15 −3.15 −2.8 −2.45 −2.1 −1.75 −1.4 400 −1.05 −0.7 (2) −0.10 −0.35 200 (3) −0.05 0 −10−1 −1 −10 −102 −103 0 0 −1 −2 −3 IC (mA) VCE = −5 V −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values mld700 −1200 Fig 11.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor mld701 −104 VCEsat (mV) 006aab427 109 fT (Hz) −103 108 (1) −102 (2) (3) −10 −10−1 −1 −10 −102 IC (mA) −103 107 −10−1 −1 −10 −102 IC (mA) VCE = −5 V; f = 1 MHz; Tamb = 25 °C IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 14. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 15.
PAGE 10
BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 8. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 16. Package outline SOT363 (SC-88) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 17. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 18.
PAGE 12
BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BC847BPN_4 20090218 Product data sheet - BC847BPN_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • Legal texts have been adapted to the new company name where appropriate.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .