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1. Product proﬁle

1.1 General description

PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)

plastic package.

1.2 Features

n Low collector capacitance

n Low collector-emitter saturation voltage

n Closely matched current gain

n Reduces number of components and board space

n No mutual interference between the transistors

n AEC-Q101 qualiﬁed

1.3 Applications

n General-purpose switching and ampliﬁcation

1.4 Quick reference data

BC856BS

65 V, 100 mA PNP/PNP general-purpose transistor

Rev. 01 — 11 August 2009 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement

NPN/PNP

complement

NXP JEITA

BC856BS SOT363 SC-88 BC846BS BC846BPN

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - −65 V

collector current - - −100 mA

DC current gain V

= −5V;

= −2mA

200 290 450

Summary of content (12 pages)

PAGE 1
BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 01 — 11 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BC856BS Package NXP JEITA NPN/NPN complement SOT363 SC-88 BC846BS NPN/PNP complement BC846BPN 1.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 1 2 3 1 2 3 sym018 3. Ordering information Table 4. Ordering information Type number BC856BS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 5.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 6. Thermal characteristics Table 7.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off VCB = −50 V; IE = 0 A current VCB = −30 V; IE = 0 A; Tj = 150 °C - - −15 nA - - −5 µA - - −100 nA IC = −10 µA - 270 - IC = −2 mA 200 290 450 IC = −10 mA; IB = −0.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 006aaa541 600 006aaa540 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) hFE −0.16 (1) 400 −0.12 −1.0 (2) −0.75 −0.08 200 −0.5 (3) −0.25 −0.04 0 −10−2 −10−1 −1 −10 0 −102 −103 IC (mA) 0 VCE = −5 V −2 −4 −6 −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 006aaa543 −10 VCEsat (V) 006aaa545 103 fT (MHz) −1 102 −10−1 (1) (2) (3) −10−2 −10−1 −1 −10 −102 10 −103 −1 −102 −10 IC (mA) IC (mA) VCE = −5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 11.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 11. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 12. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 13.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BC856BS_1 20090811 Product data sheet - - BC856BS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BC856BS NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .