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1. Product proﬁle

1.1 General description

PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD)

plastic package. Matched version of BCV62.

NPN/NPN equivalent: BCM61B

1.2 Features

n Current gain matching

1.3 Applications

n Current mirror

n Differential ampliﬁer

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

BCM62B

PNP/PNP matched double transistor

Rev. 02 — 28 August 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor TR1

CEO

collector-emitter voltage open base - - −45 V

DC current gain V

= −5V;

= −2mA

200 290 450

Per transistor

collector current - - −100 mA

Per device

current matching V

CE1

= −5V;

= 0.5 mA;

amb

≤ 25 °C

[1]

1 1.1 1.2

Summary of content (13 pages)

PAGE 1
BCM62B PNP/PNP matched double transistor Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV62. NPN/NPN equivalent: BCM61B 1.2 Features n Current gain matching 1.3 Applications n Current mirror n Differential amplifier 1.4 Quick reference data Table 1.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 collector TR2, base TR1 and TR2 2 collector TR1 3 emitter TR1 4 emitter TR2 4 Symbol 3 4 TR2 1 3 TR1 2 1 2 006aaa843 3. Ordering information Table 3. Ordering information Type number BCM62B Package Name Description Version - plastic surface-mounted package; 4 leads SOT143B 4. Marking Table 4.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = 0 V; IE = 250 mA - - 1.5 V VCB = 0 V; IE = 10 µA 400 - - mV Per transistor TR2 VEBS emitter-base voltage Per device IC1/IE2 current matching VCE1 = −5 V; IE2 = 0.5 mA; Tamb ≤ 25 °C [3] 1 1.1 1.2 VCE1 = −5 V; IE2 = 0.5 mA; Tamb ≤ 150 °C [3] 1.02 - 1.22 VCE1 = −3 V; IE2 = 0.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 006aaa832 −0.20 IB (mA) = −2.5 −2.25 −2 IC (A) −0.16 −1.75 −1.5 −1.25 −1 −0.12 006aaa833 600 hFE (1) 400 −0.75 (2) −0.5 −0.08 200 (3) −0.25 −0.04 0 0 −2 −4 −6 0 −10−2 −8 −10 VCE (V) Tamb = 25 °C −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values 006aaa834 −1.3 Fig 2.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 006aaa836 −1.0 VBE (V) 006aaa837 103 fT (MHz) −0.8 102 −0.6 −0.4 −10−1 −1 −10 −102 10 −103 −1 IC (mA) VCE = −5 V; Tamb = 25 °C Fig 5. −102 −10 IC (mA) VCE = −5 V; Tamb = 25 °C Base-emitter voltage as a function of collector current; typical values Fig 6.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 006aaa840 1.5 IC1/IE2 1.3 (1) (2) 1.1 (3) 0.9 −10−1 −1 −10 −102 IE2 (mA) (1) VCE1 = −5 V (2) VCE1 = −3 V (3) VCE1 = −1 V Fig 9. Current matching as a function of emitter current 2; typical values 8. Test information A IC1 −VCE1 2 TR1 1 TR2 3 IE2 = constant 4 006aaa841 Fig 10. Test circuit current matching BCM62B_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm 04-11-16 Fig 11. Package outline SOT143B 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 11. Soldering 3.25 0.60 (3x) 0.50 (3x) solder lands 0.60 (4x) solder resist 4 3 2.70 occupied area 1.30 3.00 1 2 solder paste msa441 0.90 1.00 2.50 Dimensions in mm Fig 12. Reflow soldering footprint SOT143B 4.45 1.20 (3×) 4 3 1.15 4.00 4.60 solder lands 1 solder resist 2 occupied area Dimensions in mm 1.00 3.40 preferred transport direction during soldering msa422 Dimensions in mm Fig 13.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM62B_2 20090828 Product data sheet - BCM62B_1 Modifications: BCM62B_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BCM62B NXP Semiconductors PNP/PNP matched double transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . .