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1. Product proﬁle

1.1 General description

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic

packages. The transistors are fully isolated internally.

1.2 Features

n Current gain matching

n Base-emitter voltage matching

n Drop-in replacement for standard double transistors

n AEC-Q101 qualiﬁed

1.3 Applications

n Current mirror

n Differential ampliﬁer

1.4 Quick reference data

BCM856BS; BCM856BS/DG

BCM856DS; BCM856DS/DG

PNP/PNP matched double transistors

Rev. 01 — 7 August 2008 Product data sheet

Table 1. Product overview

Type number Package Package conﬁguration

NXP JEITA

BCM856BS SOT363 SC-88 very small

BCM856BS/DG

BCM856DS SOT457 SC-74 small

BCM856DS/DG

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - −65 V

collector current - - −100 mA

DC current gain V

= −5V;

= −2mA

200 290 450

Summary of content (14 pages)

PAGE 1
BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number BCM856BS Package Package configuration NXP JEITA SOT363 SC-88 very small SOT457 SC-74 small BCM856BS/DG BCM856DS BCM856DS/DG 1.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions hFE1/hFE2 hFE matching VCE = −5 V; IC = −2 mA VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA Min Typ Max [1] 0.9 1 - [2] - - 2 Unit Per device [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. mV 2. Pinning information Table 3.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 4. Marking Table 5. Marking codes Type number Marking code[1] BCM856BS *BS BCM856BS/DG PB* BCM856DS DS BCM856DS/DG R9 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 6. Thermal characteristics Table 7.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol VBE Parameter Conditions Min Typ Max Unit VCE = −5 V; IC = −2 mA [2] base-emitter voltage −600 −650 −700 mV VCE = −5 V; IC = −10 mA [2] - - −760 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 2.2 pF Ce emitter capacitance VEB = −0.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 006aaa540 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) −0.16 −0.12 006aaa541 600 hFE (1) 400 −1.0 (2) −0.75 −0.08 −0.5 200 (3) −0.25 −0.04 0 0 −2 −4 −6 0 −10−2 −8 −10 VCE (V) Tamb = 25 °C −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values 006aaa542 −1.3 VBEsat (V) −1.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 006aaa544 −1 VBE (V) 006aaa545 103 fT (MHz) −0.8 102 −0.6 −0.4 −10−1 −1 −10 −102 10 −103 −1 IC (mA) VCE = −5 V; Tamb = 25 °C Fig 5. −102 −10 IC (mA) VCE = −5 V; Tamb = 25 °C Base-emitter voltage as a function of collector current; typical values Fig 6.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 8. Application information V− VCC OUT2 OUT1 IN1 R1 TR1 IN2 TR2 l out TR1 TR2 V+ 006aaa524 Fig 9. 006aaa526 Current mirror Fig 10. Differential amplifier 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 10.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 11. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 14. Wave soldering footprint SOT363 (SC-88) 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 15.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 16. Wave soldering footprint SOT457 (SC-74) BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 13. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM856BS_BCM856DS_1 20080807 Product data sheet - - BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BCM856BS; BCM856DS PNP/PNP matched double transistors 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .