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1. Product proﬁle

1.1 General description

PNP medium power transistor series.

[1] Valid for all available selection groups.

[2] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

n High current

n Two current gain selections

n High power dissipation capability

1.3 Applications

n Linear voltage regulators

n High-side switches

n MOSFET drivers

n Ampliﬁers

1.4 Quick reference data

BC636; BCP51; BCX51

45 V, 1 A PNP medium power transistors

Rev. 08 — 22 February 2008 Product data sheet

Table 1. Product overview

Type number

[1]

Package NPN complement

NXP JEITA JEDEC

BC636

[2]

SOT54 SC-43A TO-92 BC635

BCP51 SOT223 SC-73 - BCP54

BCX51 SOT89 SC-62 TO-243 BCX54

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −45 V

collector current - - −1A

peak collector current single pulse; t

≤ 1ms - - −1.5 A

DC current gain V

= −2V;

= −150 mA

63 - 250

selection -10 V

= −2V;

= −150 mA

63 - 160

selection -16 V

= −2V;

= −150 mA

100 - 250

Summary of content (15 pages)

PAGE 1
BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC636[2] SOT54 SC-43A TO-92 BC635 BCP51 SOT223 SC-73 - BCP54 BCX51 SOT89 SC-62 TO-243 BCX54 [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 2. Pinning information Table 3.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BC636[2] SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BCP51 SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BCX51 SC-62 plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3 leads [1] Valid for all available selection groups.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −45 V VCEO collector-emitter voltage open base - −45 V VEBO emitter-base voltage open collector - −5 V IC collector current - −1 A ICM peak collector current single pulse; tp ≤ 1 ms - −1.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa219 1.6 006aaa220 1.6 Ptot (W) Ptot (W) 1.2 1.2 (1) 0.8 0.8 (2) 0.4 0 −75 0.4 −25 0 25 75 0 −75 125 175 Tamb (°C) −25 0 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 FR4 PCB, standard footprint (2) FR4 PCB, standard footprint Fig 1. Power derating curve SOT54 Fig 2. Power derating curves SOT223 006aaa221 1.6 Ptot (W) (1) 1.2 (2) 0.8 (3) 0.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 6. Thermal characteristics Table 7.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa223 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aaa817 103 duty cycle = Zth(j-a) (K/W) 102 10 1.0 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa224 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aaa225 103 Zth(j-a) (K/W) duty cycle = 102 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa818 103 duty cycle = Zth(j-a) (K/W) 102 1.0 10 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 006aaa226 300 IB (mA) = −45 −40.5 −36 IC (A) (1) hFE 006aaa230 −1.6 −31.5 −27 −22.5 −1.2 200 −18 −13.5 (2) −0.8 (3) −0.4 −9 100 0 −10−1 −1 −10 −4.5 −102 −103 −104 I C (mA) VCE = −2 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. DC current gain as a function of collector current; typical values 006aaa227 −1200 Fig 11.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 8. Package outline 0.45 0.38 4.2 3.6 0.45 0.38 4.2 3.6 0.48 0.40 3 max 1 0.48 0.40 1 2 4.8 4.4 2 4.8 4.4 2.54 5.08 1.27 3 2.54 3 5.2 5.0 14.5 12.7 5.2 5.0 Dimensions in mm 04-11-16 Fig 14. Package outline SOT54 (SC-43A/TO-92) 14.5 12.7 Dimensions in mm 04-06-28 Fig 15. Package outline SOT54A 0.45 0.38 4.2 3.6 6.7 6.3 3.1 2.9 1.27 1.8 1.5 4 2.5 max 1.1 0.7 0.48 0.40 1 7.3 6.7 3.7 3.3 2 4.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 10. Revision history Table 10.
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BC636; BCP51; BCX51 NXP Semiconductors 45 V, 1 A PNP medium power transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .