Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBF1107,215, MOSFET

1. Product proﬁle

1.1 General description

The BF1107 is a depletion type ﬁeld-effect transistor in a SOT23 package. The low loss

and high isolation capabilities of this MOSFET provide excellent RF switching functions.

Integrated diodes between gate and source and between gate and drain protect against

excessive input voltage surges. Drain and source are interchangeable.

1.2 Features

n Currentless RF switch

1.3 Applications

n Various RF switching applications such as:

u Passive loop through for VCR tuner

u Transceiver switching

1.4 Quick reference data

BF1107

N-channel single gate MOSFET

Rev. 04 — 9 January 2007 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

ins(on)

on-state insertion loss V

=0V;

f = 50 MHz to 860 MHz

=50Ω - - 2.5 dB

=75Ω - - 3.5 dB

ISL

off

off-state isolation V

=5V;

f = 50 MHz to 860 MHz

=50Ω 30--dB

=75Ω 30--dB

DSon

drain-source on-state

resistance

=0V; I

= 1 mA - 12 20 Ω

GS(p)

gate-source pinch-off

voltage

=1V; I

=20µA-−3 −4.5 V

Summary of content (8 pages)

PAGE 1
BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable.
PAGE 2
BF1107 NXP Semiconductors N-channel single gate MOSFET 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline 1 drain [1] 2 source [1] 3 gate 1 3 3 1 [1] Symbol 2 2 sym120 Drain and source are interchangeable 3. Ordering information Table 3. Ordering information Type number BF1107 Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code BF1107 S3p 5.
PAGE 3
BF1107 NXP Semiconductors N-channel single gate MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Rth(j-sp) [1] Parameter Conditions [1] thermal resistance from junction to solder point Typ Unit 260 K/W Soldering point of the gate lead. 7. Static characteristics Table 7. Static characteristics Tj = 25 °C. Symbol Parameter Conditions Min Typ Max Unit V(BR)GSS gate-source breakdown voltage VDS = 0 V; IGS = 0.
PAGE 4
BF1107 NXP Semiconductors N-channel single gate MOSFET 001aaf760 0 Lins(on) (dB) 001aaf780 0 (2) ISLoff (dB) −1 (1) −20 −2 −3 −40 (2) −4 (1) −5 10 102 −60 103 102 10 f (MHz) 103 f (MHz) (1) RS = RL = 50 Ω (1) RS = RL = 50 Ω (2) RS = RL = 75 Ω (2) RS = RL = 75 Ω VSG = VDG = 0 V VSG = VDG = 5 V Fig 1. On-state insertion loss as a function of frequency; typical values Fig 2.
PAGE 5
BF1107 NXP Semiconductors N-channel single gate MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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BF1107 NXP Semiconductors N-channel single gate MOSFET 10. Abbreviations Table 9. Abbreviations Acronym Description MOSFET Metal-Oxide Semiconductor Field-Effect Transistor RF Radio Frequency VCR Videocassette Recorder 11. Revision history Table 10.
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BF1107 NXP Semiconductors N-channel single gate MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BF1107 NXP Semiconductors N-channel single gate MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . .