Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsLinear ICsBF1118R,215

1. Product profile

1.1 General description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a

band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low

loss and high isolation capabilities of these devices provide excellent RF switching

functions. The gate of the MOSFET can be isolated from ground with the diode, resulting

in low losses. Integrated diodes between gate and source and between gate and drain

protect against excessive input voltage surges.

1.2 Features and benefits

 Specially designed for low loss RF switching up to 1 GHz

1.3 Applications

 Various RF switching applications such as:

 Passive loop through for VCR tuner

 Transceiver switching

1.4 Quick reference data

[1] I

= diode forward current.

BF1118; BF1118R; BF1118W;

BF1118WR

Silicon RF switches

Rev. 3 — 14 November 2014 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

ins(on)

on-state insertion loss R

=50; f  1GHz;

=0V; I

=0mA

[1]

--2.5dB

ISL

off

off-state isolation R

=50; f  1GHz;

= 3.3 V; I

=1mA

30 - - dB

DSon

drain-source on-state resistance V

=0V; I

= 1 mA - 15 23.3 

GS(p)

gate-source pinch-off voltage V

=1V; I

=20A-2 2.44 V

Summary of content (13 pages)

PAGE 1
BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions.
PAGE 2
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 2. Pinning information Table 2.
PAGE 3
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 4. Marking Table 4. Marking Type number Marking code BF1118 VC% BF1118R VD% BF1118W VB BF1118WR VC 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 7. Static characteristics Table 7. Static characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)GSS gate-source breakdown voltage VDS = 0 V; IGS = 0.1 mA - - 7 V VGS(p) gate-source pinch-off voltage VDS = 1 V; ID = 20 A - 2 2.44 V IDSX drain cut-off current VGS = 3.3 V; VDS = 1 V - - 16 A IGSS gate leakage current VGS = 3.
PAGE 5
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches DDO DDO /LQV RQ G% ,6/RII G% Fig 1. I 0+] I 0+] VSK = VDK = 0 V; RS = RL = 50 ; IF = 0 mA (diode forward current). VSK = VDK = 3.3 V; RS = RL = 50 ; IF = 1 mA (diode forward current). Measured in test circuit; see Figure 3. Measured in test circuit; see Figure 3.
PAGE 6
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 9.
PAGE 7
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 3ODVWLF VXUIDFH PRXQWHG SDFNDJH UHYHUVH SLQQLQJ OHDGV ' 627 5 % ( $ ; \ +( Y 0 $ H ES Z 0 % 4 $ $ F /S E H GHWDLO ; PP VFDOH ',0(16,216 PP DUH WKH RULJLQDO GLPHQVLRQV 81,7 $ $ PD[ ES E F ' ( H H +( /S 4 Y Z \ PP 287/,1( 9(56,21 5()(5(1&(6 ,(& 62
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BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 3ODVWLF VXUIDFH PRXQWHG SDFNDJH OHDGV 627 1 ' % $ ( ; +( \ Y 0 $ H 4 $ $ F E ES Z 0 % /S H GHWDLO ; PP VFDOH ',0(16,216 PP DUH WKH RULJLQDO GLPHQVLRQV $ $ 81,7 ES E F PD[ PP 287/,1( 9(56,21 ( H H +( /S 4 Y Z \ 5()(5(1&(6 ,(& 627 1 Fig 6.
PAGE 9
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 3ODVWLF VXUIDFH PRXQWHG SDFNDJH UHYHUVH SLQQLQJ OHDGV ' 627 5 % $ ( ; +( \ Y 0 $ H 4 $ $ F Z 0 % ES /S E H GHWDLO ; PP VFDOH ',0(16,216 PP DUH WKH RULJLQDO GLPHQVLRQV 81,7 $ $ PD[ ES E F ' ( H H +( /S 4 Y Z \ PP 287/,1( 9(56,21 5()(5(1&(6 ,(& 6
PAGE 10
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 9.
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BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 12
BF1118(R); BF1118W(R) NXP Semiconductors Silicon RF switches Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
PAGE 13
NXP Semiconductors BF1118(R); BF1118W(R) Silicon RF switches 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . .