Datasheet

BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 5 of 13
NXP Semiconductors
BF1118(R); BF1118W(R)
Silicon RF switches
V
SK
= V
DK
= 0 V; R
S
= R
L
= 50 ; I
F
= 0 mA (diode
forward current).
Measured in test circuit; see Figure 3
.
V
SK
= V
DK
= 3.3 V; R
S
= R
L
= 50 ; I
F
= 1 mA (diode
forward current).
Measured in test circuit; see Figure 3
.
Fig 1. On-state insertion loss as a function of
frequency; typical values
Fig 2. Off-state isolation as a function of frequency;
typical values
On-state: V = 0 V.
Off-state: V = 3.3 V.
Fig 3. Test circuit
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