DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997
NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m.
NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current IG max. 10 mA Total power dissipation up to Tamb = 40 C (note 1) Ptot max. 250 mW Storage temperature range Tstg 65 to 150 C Junction temperature Tj max.
NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DYNAMIC CHARACTERISTICS Measuring conditions (common source): VDS = 10 V; VGS = 0; Tamb = 25 C for BF510 and BF511 VDS = 10 V; ID = 5 mA; Tamb = 25 C for BF512 and BF513 y-parameters (common source) Input capacitance at f = 1 MHz Cis Input conductance at f = 100 MHz gis typ.
NXP Semiconductors Product specification N-channel silicon field-effect transistors MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 40 0 80 120 200 160 Tamb (°C) Fig.4 Power derating curve.
NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification N-channel silicon field-effect transistors Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
