Datasheet

1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
1.2 Features and benefits
 Low leakage level (typ. 500 fA)
 High gain
 Low cut-off voltage.
1.3 Applications
 Impedance converters in e.g. electret microphones and infrared detectors
 VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011 Product data sheet
SOT23
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage (DC)
--30 V
V
GSoff
gate-source cut-off
voltage
I
D
=200A;
V
DS
=15V
0.5 - 7.5 V
I
DSS
drain current V
GS
=0V; V
DS
=15V
BF556A 3 - 7 mA
BF556B 6 - 13 mA
BF556C 11 - 18 mA
P
tot
total power
dissipation
T
amb
 25 C--250mW
y
fs
 forward transfer
admittance
V
GS
=0V; V
DS
=15V 4.5 - - mS