DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BF620; BF622 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 21 2004 Dec 14
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 FEATURES PINNING • Low current (max. 50 mA) PIN • High voltage (max. 300 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • Video output stages. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BF621 and BF623. 2 MARKING 3 TYPE NUMBER MARKING CODE BF620 DC BF622 DA 3 2 1 1 sym042 Fig.1 Simplified outline (SOT89) and symbol.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − 300 V − 250 V BF620 − 300 V BF622 − 250 V BF620 BF622 VCEO MIN.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 006aaa238 1600 Ptot (mW) 1200 800 (1) (2) (3) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 250 K/W note 2 156 K/W note 3 113 K/W 30 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 006aaa236 103 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet NPN high-voltage transistors BF620; BF622 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
