DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09
NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W FEATURES PINNING • Low current (max. 50 mA) PIN • High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional communication equipment. DESCRIPTION 3 handbook, halfpage NPN high-voltage transistor in a SOT323 plastic package. 3 MARKING 1 MARKING CODE(1) TYPE NUMBER BF820W 2 1 1V* 2 Top view Notes 1. * = p : made in Hong Kong. * = t : made in Malaysia.
NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
