Datasheet

2000 Jan 05 4
NXP Semiconductors Product specification
N-channel junction FET BF862
STATIC CHARACTERISTICS
T
j
=25C; unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; T
amb
=25C; V
GS
=0; V
DS
= 8 V; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
gate-source breakdown voltage I
GS
= 1 A; V
DS
=0 20 V
V
GS
gate-source forward voltage V
DS
=0; I
G
=1mA 1V
V
GSoff
gate-source cut-off voltage V
DS
=8V; I
D
=1A 0.3 0.8 1.2 V
I
GSS
reverse gate current V
GS
= 15 V; V
DS
=0 1nA
I
DSS
drain-source current V
GS
=0; V
DS
=8V 10  25 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y
fs
 common source forward transfer
admittance
T
j
=25C3545 mS
g
os
common source output conductance T
j
=25C  180 400 S
C
iss
input capacitance f = 1 MHz  10  pF
C
rss
reverse transfer capacitance f = 1 MHz  1.9  pF
e
n
equivalent noise input voltage f = 100 kHz  0.8  nV/Hz
f
T
transition frequency  715  MHz