Datasheet

2000 Jan 05 5
NXP Semiconductors Product specification
N-channel junction FET BF862
handbook, halfpage
0 −0.5 −1
V
GSoff
(V)
I
DSS
(mA)
−1.5
40
30
10
0
20
MCD809
Fig.3 Drain saturation current as a function of
gate-source cut-off voltage; typical values.
V
DS
=8V; T
j
=25C.
handbook, halfpage
0
300
200
100
0
10 20 30
MCD810
I
DSS
(mA)
g
os
(μS)
Fig.4 Common-source output conductance as a
function of drain saturation current;
typical values.
V
DS
=8V; T
j
=25C.
handbook, halfpage
01020
I
DSS
(mA)
y
fs
(mS)
30
60
50
30
20
40
MCD811
Fig.5 Forward transfer admittance as a function
of drain saturation current; typical values.
V
DS
=8V; T
j
=25C.
handbook, halfpage
0
60
40
20
0
10 20 30
MCD812
I
D
(mA)
y
fs
(mS)
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
V
DS
=8V; T
j
=25C.