DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21
NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1 emitter Low noise figure 2 base High transition frequency 3 emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. handbook, halfpage 3 4 2 1 APPLICATIONS RF front end with high linearity system demands (CDMA) Common emitter class AB driver.
NXP Semiconductors Product specification NPN wideband transistor BFG480W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 14.5 V VCEO collector-emitter voltage open base 4.
NXP Semiconductors Product specification NPN wideband transistor BFG480W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 50 A; IE = 0 V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 5 mA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 100 A; IC = 0 MIN. TYP. MAX. UNIT 14.5 V 4.
NXP Semiconductors Product specification NPN wideband transistor BFG480W MGR624 MGR625 800 100 handbook, halfpage handbook, halfpage Cre hFE (fF) 80 600 60 400 40 200 20 0 0 0 50 100 IC (mA) 0 150 2 3 4 5 VCB (V) VCE = 2 V. Fig.3 1 IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.
NXP Semiconductors Product specification NPN wideband transistor BFG480W MGR629 MGR628 50 20 handbook, halfpage handbook, halfpage gain (dB) gain (dB) Gmax 16 40 S21 12 MSG 30 S21 Gmax 8 20 4 10 0 0 0 40 80 120 160 102 10 IC (mA) VCE = 2 V; f = 2 GHz. Fig.7 1998 Oct 21 103 f (MHz) 104 IC = 80 mA; VCE = 2 V. Gain as a function of collector current; typical values. Fig.8 6 Gain as a function of frequency; typical values.
NXP Semiconductors Product specification NPN wideband transistor BFG480W 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 1.0 MGR630 −90° IC = 80 mA; VCE = 2 V; Zo = 50 Fig.9 Common emitter input reflection coefficient (S11); typical values. 90° handbook, full pagewidth 135° 45° 40 MHz 25 20 15 10 5 3 GHz 180° −135° 0° −45° −90° MGR631 IC = 80 mA; VCE = 2 V. Fig.
NXP Semiconductors Product specification NPN wideband transistor BFG480W 90° handbook, full pagewidth 135° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 180° 0° 40 MHz −135° −45° −90° MGR632 IC = 80 mA; VCE = 2 V. Fig.11 Common emitter reverse transmission coefficient (S12); typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 1.
NXP Semiconductors Product specification NPN wideband transistor BFG480W Noise data VCE = 2 V; typical values. f (MHz) 900 2000 IC (mA) Fmin (dB) mag angle rn () 2 1.1 0.41 96.1 0.21 4 1.1 0.31 106.6 0.14 Fmin 6 1.2 0.27 118.4 0.12 (dB) 8 1.2 0.26 131.7 0.10 10 1.3 0.28 143.2 0.10 20 1.6 0.39 166.2 0.07 40 2.0 0.49 176.0 0.07 60 2.3 0.57 179.5 0.07 80 2.9 0.45 177.3 0.18 2 2.4 0.57 171.9 0.09 4 2.0 0.49 178.9 0.08 6 1.8 0.46 175.
NXP Semiconductors Product specification NPN wideband transistor BFG480W MGR635 MGR636 80 16 handbook, halfpage ηC (%) Gp (dB) Gp 80 16 handbook, halfpage ηC (%) Gp (dB) Gp 60 12 8 40 8 40 4 20 4 20 0 0 12 ηC ηC 0 10 14 18 22 PL (dBm) 0 10 26 Pulsed, class-AB operation; < 1 ; 2; tp = 5 ms. f = 2 GHz; VCE = 2.4 V; ICQ = 1 mA; tuned at PL = 100 mW. 14 18 22 PL (dBm) 26 Pulsed, class-AB operation; < 1 ; 2; tp = 5 ms. f = 2 GHz; VCE = 3.
NXP Semiconductors Product specification NPN wideband transistor BFG480W VC handbook, full pagewidth VS R1 L5 R2 R3 C7 C6 TR1 C3 L4 L1 RF input 50 Ω L3 C5 L2 C1 RF output 50 Ω DUT C4 C2 MGM221 Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.
NXP Semiconductors Product specification NPN wideband transistor BFG480W 45 handbook, full pagewidth 35 VS VC R1 TR1 L5 R2 R3 C3 C7 C6 L1 C1 L4 C5 L2 L3 input C2 DUT C4 output MBK827 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.
NXP Semiconductors Product specification NPN wideband transistor BFG480W PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.
NXP Semiconductors Product specification NPN wideband transistor BFG480W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification NPN wideband transistor BFG480W Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s).
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
