DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. handbook, halfpage 3 Low level general purpose amplifiers in thick and thin-film circuits. 1 SYMBOL 1 d 2 s source(1) 3 g gate MAM385 Marking codes: BFR30: M1p. BFR31: M2p. DESCRIPTION drain(1) s 2 Top view PINNING - SOT23 PIN d g APPLICATIONS Fig.1 Simplified outline and symbol.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VDS drain-source voltage VDGO drain-gate voltage VGSO gate-source voltage ID drain current IG forward gate current (DC) Ptot total power dissipation Tstg storage temperature Tj operating junction temperature MIN. MAX.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IGSS gate cut-off current VDS = 0; VGS = 10 V IDSS drain current VGS = 0; VDS = 10 V nA 4 10 mA 1 5 mA 0.7 3 V 0 1.3 V 4 V 2 V BFR30 5 V BFR31 2.5 V 1 4 mS 1.5 4.5 mS 0.5 mS 0.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA657 10 MDA658 10 ID handbook, halfpage handbook, halfpage ID (mA) (mA) 8 8 max 6 6 4 4 VGS = 0 V −0.5 −1.0 typ 2 2 −1.5 −2.0 min 0 −4 −3 −2 −1 0 0 0 2 4 6 8 VGS (V) BFR30. VDS = 10 V; Tj = 25 C. 10 VDS (V) BFR30. Tj = 25 C. Fig.3 Input characteristics. Fig.4 Output characteristics; typical values.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA661 6 MDA662 6 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 4 4 VGS = 0V −0.5 −0.2 −1.0 2 −0.4 2 −0.6 −1.5 −0.8 −1 −2.0 0 −1.2 0 25 50 75 100 Tj (°C) 125 25 BFR30. VDS = 10 V. Fig.7 50 75 100 Tj (°C) 125 BFR31. VDS = 10 V. Drain current as a function of junction temperature; typical values. Fig.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA664 7.5 MDA665 75 handbook, halfpage handbook, halfpage yfs (mA/V) yos (μA/V) 5 50 BFR31 BFR30 BFR30 BFR31 2.5 25 0 0 0 2 4 ID (mA) 6 0 VDS = 10 V; f = 1 kHz; Tamb = 25 C. 2 4 ID (mA) 6 VDS = 10 V; f = 1 kHz; Tamb = 25 C. Fig.11 Common source transfer admittance as a function of drain current; typical values. Fig.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA668 −1 Crs handbook, halfpage (pF) −0.8 −0.6 −0.4 −0.2 0 0 −1 −2 −3 −4 −5 VGS (V) VDS = 10 V; f = 1 MHz; Tamb = 25 C. Fig.15 Feedback capacitance as a function of gate-source voltage; typical values. MDA669 104 handbook, full pagewidth en (nV/ Hz) 103 102 10 (1) (2) 1 10 102 103 104 105 f (Hz) VDS = 10 V; Tamb = 25 C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA. Fig.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA670 104 handbook, full pagewidth in (fA/ Hz) 103 102 (1) 10 (2) 1 10 102 103 104 105 f (Hz) VDS = 10 V; Tamb = 25 C. (1) BFR31; ID = 1 mA. (2) BFR30; ID = 4 mA. Fig.17 Equivalent noise current source as a function of frequency; typical values.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
