DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS19 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15
Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING • Low current (max. 30 mA) PIN • Low voltage (max. 20 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Medium frequency applications in thick and thin-film circuits. DESCRIPTION handbook, halfpage 3 3 NPN medium frequency transistor in a SOT23 plastic package. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER BFS19 Top view F2∗ 2 2 MAM255 Note 1. ∗ = p : Made in Hong Kong.
Philips Semiconductors Product specification NPN medium frequency transistor BFS19 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS − TYP. − MAX.
Philips Semiconductors Product specification NPN medium frequency transistor BFS19 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification NPN medium frequency transistor BFS19 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification NPN medium frequency transistor BFS19 NOTES 1999 Apr 15 6
Philips Semiconductors Product specification NPN medium frequency transistor BFS19 NOTES 1999 Apr 15 7
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