SO T2 3 BFT25A NPN 5 GHz wideband transistor Rev. 5 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol Code: V10 1 3 base 2 emitter 3 collector 3 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number BFT25A Package Name Description Version - plastic surface mounted package; 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code[1] BFT25A 34* [1] * = p : Made in Hong Kong.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 6. Thermal characteristics Table 6. Symbol Rth(j-s) [1] Thermal characteristics Parameter Conditions [1] from junction to soldering point Typ Unit 260 K/W Ts is the temperature at the soldering point of the collector tab. 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor mbg247 40 Ptot (mW) mcd138 100 hFE 80 30 60 20 40 10 20 0 0 50 100 150 0 10−3 200 10−2 10−1 10 1 I C (mA) Ts (°C) VCE = 1 V. Fig 1. Power derating curve. Fig 2. mcd103 mcd140 6 0.4 Cre (pF) DC current gain as a function of collector current. fT (GHz) 0.3 4 0.2 2 0.1 0 0 1 2 3 4 0 5 0 VCB (V) 2 3 I C (mA) 4 VCE = 1 V; Tamb = 25 C; f = 500 MHz. IC = ic = 0 A; f = 1 MHz. Fig 3.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor mcd104 25 GUM gain (dB) mcd105 20 gain (dB) 20 GUM 15 15 MSG 10 MSG 10 5 5 0 0 0 0.5 1.0 1.5 0 2.0 0.5 1.0 1.5 I C (mA) VCE = 1 V; f = 500 MHz. Fig 5. 2.0 I C (mA) VCE = 1 V; f = 1 GHz. Gain as a function of collector current. Fig 6. mcd106 50 gain (dB) Gain as a function of collector current.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor mcd145 4 F (dB) F (dB) f= 2 GHz 3 mcd146 4 IC = 2 mA 3 1 GHz 1 mA 500 MHz 2 2 1 1 0 10−1 1 0 102 10 IC (mA) VCE = 1 V. Fig 9. 0.5 mA 103 f (MHz) 104 VCE = 1 V. Minimum noise figure as a function of collector current. Fig 10. Minimum noise figure as a function of frequency. 1 0.5 2 pot. unst. region 6 dB 0.2 4 dB 5 2.5 dB 10 +j 0.2 0 −j 0.5 1 2 5 stability circle ∞ 10 MSG 10 14.5 dB 5 13 dB 0.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor Table 8. f (MHz) 500 Noise parameters VCE (V) IC (mA) 1 Fmin (dB) 1 1.9 opt Rn/50 (mag) (ang) 0.79 4 2.5 1 0.5 2 pot. unst. region stability circle 8 dB 0.2 4 dB 5 3 dB 10 +j 0.2 0 −j 0.5 MSG 11.2 dB 1 2 5 ∞ 10 Γopt Fmin = 2 dB 10 10 dB 5 0.2 8 dB 2 0.5 mcd109 1 See Table 9; Zo = 50 . Average gain parameter: MSG = 11.2 dB. Fig 12. Noise circle figure. Table 9.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor pot. unst. region stability circle 1 0.5 2 MSG 7.7 dB 0.2 Γopt 7 dB 5 Fmin = 2.4 dB +j 10 3 dB 0.2 0 −j 1 0.5 2 5 dB 5 ∞ 10 4 dB 10 6 dB 0.2 5 2 0.5 mcd110 1 See Table 10; Zo = 50 . Average gain parameter: MSG = 7.7 dB. Fig 13. Noise circle figure. Table 10. f (MHz) 2000 BFT25A Product data sheet Noise parameters VCE (V) 1 IC (mA) 1 Fmin (dB) 2.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 1 0.5 2 0.2 5 10 +j 0.2 0 1 0.5 2 −j ∞ 5 10 40 MHz 3 GHz 10 5 0.2 2 0.5 mcd111 1 VCE = 1 V; IC = 1 mA. Zo = 50 . Fig 14. Common emitter input reflection coefficient (S11). 90° 135° 45° 3 GHz 180° 40 MHz 5 4 3 2 1 0° 0 −135° −45° −90° mcd112 VCE = 1 V; IC = 1 mA. Fig 15. Common emitter forward transmission coefficient (S21).
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 90° 135° 45° 3 GHz 180° 40 MHz 0.5 0.4 0.3 0.2 0.1 0° 0 −135° −45° −90° mcd114 VCE = 1 V; IC = 1 mA. Fig 16. Common emitter reverse transmission coefficient (S12). 1 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 40 MHz −j 10 3 GHz 0.2 5 2 0.5 1 mcd113 VCE = 1 V; IC = 1 mA. Zo = 50 . Fig 17. Common emitter output reflection coefficient (S22).
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 9. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BFT25A v.5 20110912 Product data sheet - BFT25A v.4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 12. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . .